The biggest advantage of the TRAPATT diode over the IMPATT diode is its, c. ability to operator at higher frequencies. b. increase the population inversion. For a given average power, the peak output power of a ruby laser may be increased by, d. dispensing with the Fabry-Perot resonator, 40. At this time we are unable to process approval. On a historical note, IMPATT diode is also called ‘Read’ diode in honor of W.Т. Indicate the false statement. It has very small interelectrode capacitances. Top Answer. Indicate the false statement. These are set so that avalanche breakdown occurs. Also provides professionals with materials for their lectures and practice exams. Make sure to familiarize each and every questions to increase the chance of passing the ECE Board Exam. IMPATT diodes are economical. Previous Question INTRODUCTION Rely on the effect of voltage breakdown across a reverse biased p-n junction. A non-degenerate parametric amplifier has an input frequency fi and a pump frequency fp. What is the number of p-n junctions ? Although the TRAPATT diode provides a much higher level of efficiency than the IMPATT, its major disadvantage is that the noise levels on the signal are even higher than they are when using an IMPATT. The particle current and the AC voltage in a diode are expanded into Fourier series, and their harmonic components are related with each other by the corresponding impedances of the harmonic-frequency circuits. Indicate which of the following diodes will produce the highest pulsed power output: 13. To increase electrical conductivity of the p-type and n-type semiconductor impurities are added. For its operation as a microwave signal generator, IMPATT diode is operated under reverse bias conditions. B 3. The output from a laser is monochromatic; this means that it is, 39. They operate at frequencies of about 3 and 100 GHz, or higher. heavily doped P region). A major drawback of using IMPATT diodes is the high level of phase noise they generate. Large-signal analysis of an IMPATT diode is presented, where the effect of harmonic-frequency circuits is included. Impatt diode 1. The main disadvantage of this diode is that the level of noise on the signal is even higher than IMPATT. 13. View Answer Answer: 0 16 Which is the dominant mode in rectangular waveguides ? The transmission system using two ground plane is, 5. They have negative resistance and are used as oscillators and amplifiers at microwave frequencies. Indicate which of the following diodes does not use negative resistance in its operation: 14. Biggest problem with IMPATT diode is hsot noise. The laser diode is a further development upon the regular light-emitting diode, or LED. a. provide sharp focusing for the electron beam . D TE11. Discuss in Forum . IMPATT diode.

This state of diode is known as forward biased state. Asked by Wiki User. 2010-02-24 05:52:48. The figure below represents the negative resistance characteristic of IMPATT diode with respect to transit angle: Hence in this way current through an IMPATT diode is generated. Disadvantages: • High noise figure • high operating current • high spurious AM/FM noise Impatt diode Applications:• Voltage controlled Impatt oscillators• low power radar system• injection locked amplifiers• cavity stabilized impatt diode oscillators Pinoybix.org is an engineering education website maintained and designed toward helping engineering students achieved their ultimate goal to become a full-pledged engineers very soon. FETs are preferred to bipolar transistors at the highest frequencies because they, b. lend themselves more easily to integration, 10. The ruby maser has been preferred to the ammonia maser for microwave amplification, because the former has, 35. Copyright 2018 InterviewMania.com - All rights reserved. I can assure you that this will be a great help in reviewing the book in preparation for your Board Exam. 0 0 1 0 0 0 0. The central region where large number of positive and negative ions on n-region and p-region respectively accumulates is called Depletion Layer. It shows compactness in size. 12. Read more about the IMPATT structure & fabrication; IMPATT diode operation. Help me go forward with the same spirit. It is, 22. b. high noise. A varactor diode may be useful at microwave frequencies (indicate the false answer). For Gunn diodes, gallium arsenide is preferred to silicon because the former, a. has a suitable empty energy band, which silicon does not have, c. has a lower noise at the highest frequencies, d. is capable of handling higher power densities, 32. Inability to provide pulsed operation. B TM11. Then idler frequency is, 23. Advantages. (D) Inability to provide pulsed operation. The acronym of the BARITT diode is “Barrier Injection Transit Time diode”, bears numerous comparisons to the more generally used IMPATT diode. C TM01. Correct Option: B. NA. The transferred-electron bulk effect occurs in, 17. This test is Rated positive by 87% students preparing for Electrical Engineering (EE).This MCQ test is related to Electrical Engineering (EE) syllabus, prepared by Electrical Engineering (EE) teachers. D 1. This diode is used in the microwave signal generation like the … BARITT Diode. An IMPATT diode (IMPact ionization Avalanche Transit-Time diode) is a form of high-power semiconductor diode used in high-frequency microwave electronics devices. IMPATT diode operating principles. The biggest disadvantage of the IMPATT diode is its, a. lower efficiency than that of the other microwave diodes, 33. The non-degenerate one-port parametric amplifier should have a high ratio of pump to signal frequency because this, a. permits satisfactory high frequency operation, a. has a tiny hole through its center to facilitate tunneling, b. is a point-contact diode with a very high reverse resistance, c. uses a high doping level to provide a narrow junction, d. works by quantum tunneling exhibited by gallium arsenide only, 27. It provides reliable operation at high temperature. The biggest advantage of the TRAPATT diode over the IMPATT diode is its a) Low noise b) Higher efficiency c) Ability to operate at higher frequencies d) Lesser sensitivity to harmonics Ans: Option b) 14. A maser RF amplifier is not really suitable for, 37. Traveling-wave parametric amplifiers are used to, b. reduce the number of varactor diodes required, 24. If you are looking for a reviewer in Communications Engineering this will definitely help. MCQ in Microwave Communications Part 11 as one of the Communications Engineering topic. Microwave engineering miscellaneous. If high-order frequency multiplication is required from a diode multiplier, a. the resistive cutoff frequency must be high, b. a small value of the base resistance is required, d. a large range of capacitance variation is needed, 21. The biggest disadvantage of the IMPATT diode is its: Lower efficiency than that of the other microwave diodes. Schottky Diode. A 0. (B) Low power handling capabilities. It provides high operating range. c. inability to provide pulsed operation. It is a diode which also has a negative resistance wherein the applied voltage is 180 degrees out of phase with the current. A stability needs to be ended according to the required application. A varactor diode may not be useful at microwave frequencies a) For electronic tuning b) for frequency multiplication c) as an oscillator At the moment, Pinoybix has become one of the most trusted engineering review sites helping thousands of aspiring engineers achieve their goals. The biggest disadvantage of the IMPATT diode is its A. low efficiency than the other microwave diodes B. low power handling ability C. high noise D. inability to provide pulsed operation . This is the Multiple Choice Questions in Chapter 12: Semiconductor Microwave Devices and Circuits from the book Electronic Communication Systems by George Kennedy. Next Question. Discuss in Forum . Q. Negative resistance is obtained with a Gunn diode because of, a. electron transfer to a less mobile energy level, b. avalanche breakdown with the high voltage gradient, d. electron domains forming at the junction, 31. To create an output, a DC supply applied to the IMPATT which oscillates when a suitable tuned circuit is in circuit. View Answer: Answer: Option B. In BARITT diodes, to avoid the noise, carrier injection is provided by punch through of the depletion region. The biggest disadvantage of the IMPATT diode is its.

This page covers advantages and disadvantages of Diode. The shot noise is generated in the device due to high operating current. The biggest disadvantage of the IMPATT diode is its a lower efficiency than from ENGINEERIN ECEN 404 at Polytechnic University of the Philippines 1a. It produces spurious noise (AM and FM) with higher levels compare to klystron and Gunn diodes. The negative resistance in a BARITT diode is obtained on account of the drift of the injected holes to the collector end of the diode, made of p-type material. The IMPATT diode or IMPact ionisation Avalanche Transit Time diode is an RF semiconductor device that is used for generating microwave radio frequency signals. Low power-handling ability. The biggest disadvantage of the IMPATT diode is its A. lower efficiency than for the other microwave diodes B. low power-handling ability C. high noise D. inability to provide pulsed operation . we respect your privacy and take protecting it seriously, Answers key on MCQ in Semiconductor Microwave Devices and Circuits, Multiple Choice Questions in Electronic Communication Systems, Pinoybix Elex is officially on Google Play | First of …, Complete List of Reviewers to Pass Engineering Board Exam, MCQ in Machine Design and Shop Practice Part 8 | …, MCQ in Machine Design and Shop Practice Part 7 | …, MCQ in Refrigeration Engineering Part 8 | ME Board Exam, Kennedy: MCQ in Introduction to Fiber Optic Technology, Kennedy: MCQ in Broadband Communications Systems, Kennedy: MCQ in Semiconductor Microwave Devices and Circuits, Kennedy: MCQ in Microwave Tubes and Circuits, Kennedy: MCQ in Waveguides, Resonators and Components, Kennedy: MCQ in Radiation and Propagation of Waves, Kennedy: MCQ in Single-Sideband Techniques, Kennedy: MCQ in Introduction to Communication Systems. 3. a. lower efficiency than that of the other microwave diodes. A. PIN diode B. A tunnel diode is loosely coupled to its cavity in order to, b. increase the available negative resistance, d. allow operation at the highest frequencies, 28. IMPATT diode I-V characteristic . With the ability to operate at frequencies between about 3 and 100 GHz or more, one of the main advantages of this microwave diode is the relatively high power capability of the IMPATT diode. A pinoybix mcq, quiz and reviewers. One of the following which diode is not used as a microwave mixer or detector? A Gunn diode, also known as a transferred electron device (TED), is a form of diode, a two-terminal semiconductor electronic component, with negative resistance, used in high-frequency electronics.It is based on the "Gunn effect" discovered in 1962 by physicist J. A TE10. Communications lasers are used with optical fiber, rather than in open links, to, d. ensure that people are not blinded by them, 41. Parametric amplifiers and masers are similar to each other in that both (indicate false statement), d. generally required circulators, since they are one-port devices, 36. IMPATT diodes are most powerful continuous wave solid state microwave power sources. Biggest disadvantage of the impatt diode? Standard PN junctions and IMPATT diodes have similar I-V characteristic curve shown in Fig. A disadvantage of microstrip compared with stripline is that microstrip, a. does not readily lend itself to printed circuit techniques, d. is more expensive and complex to manufacture, 4. The term “laser” itself is actually an acronym, despite the fact its often written in lower-case letters. 13. At the same time, when a greater number of impurities is added, narrow depletion region occurs. Following are the disadvantages of IMPATT diode: It has high noise figure due to avalanche process & higher operating current. The tuning range … View Answer. Each one has its own advantages and disadvantages. Crystal diode C. Schottky barrier diode D. Backward diode . P The IMPATT diode is generally used in microwave generators. C 2. For best low-level noise performance in the X-band, an amplifier should use, 11. 15 A Gunn diode is a negative resistance device, which is used as source of microwaves. (C) High noise. Drawbacks or disadvantages of IMPATT diode. The main advantage is their high-power capability; single IMPATT diodes … d. low power-handling ability. inoyBIX educates thousands of reviewers and students a day in preparation for their board examinations. The gain-bandwidth frequency of a microwave transistor, fT, is the frequency at which the, d. beta of the transistor falls to unity unity, 18. A wide and big depletion region is formed when a smaller number of impurities is added to p-n junction diode. PIN diode . The magnetic field is used with a ruby maser to. An advantage of stripline over microstrip is its, a. easier integration with semiconductor devices, c. higher isolation between adjacent circuits, 9. A varactor diode may not be useful at microwave frequencies a) For electronic tuning b) for frequency multiplication c) as an oscillator The magnetic field is used with a ruby maser to, a. provide sharp focusing for the electron beam, 34. (13) The biggest disadvantage the IMP ATT diode has is its (a) Low Efficiency (b) high noise (c) Low BW (d) inability to provide pulse operation (e) low power handling ability 11) The type of antenna to be used for producing circularly polarized beams is a) pyramidal horn b) log-periodic array c) paraboloid d) helical antenna 12) In LOS-line of sight propagation systems, to take account of normal refraction, an effective earth radius factor k is used whose value is a) 4/3 b) 4 c) ¾ ... Read more Microwave Engineering MCQ Questions Answers Electronics ECE 114. The Biggest Disadvantage the IMPATT Diode has is its (A) Low Efficiency (B) High Noise (C) Low BW (D) Inutility to provide Pulse Operation. So, it is not as good as Klystron or Gunn diodes. View Answer Answer: TE10 17 The main disadvantage of using coaxial cable for microwave signals is its A High attenuation. Breakdown occurs in the region very close to the P+ (i.e. These diodes are used in a variety of applications from low power radar systems to alarms. Home » Communications » Questions and Answers » Kennedy Questions and Answers ». Typically noise figure of IMPATT is about 30 dB. Indicate the false statement. Indicate the falsestatement. See Answer . It also has very high levels of harmonics as a result of the short current pulses that are used. Solution: 33. f. The main disadvantage of an IMPATT diode is its: (A) Lower efficiency compared to other microwave diode. Its Noise figure is higher than TWT or Gunn diode when it is used as an amplifier. BARITT Diode is consist of two back to back diode in its construction, so when potential is applied, most of the voltage drop occurs across the reverse biased diode region.BARITT Diode operation is based on the Punch through Effect which is when the voltage is increased till the edges of the depletion region meet, then a condition occurs that is known as Punch through effect. View Answer. One of the following is not used as a microwave mixer or detector: 15. Laser diodes. An advantage of stripline over waveguide is its, d. greater compatibility with solid-state devices, 6. 20. Read, who first proposed the p+-n-i-n+ structure based on the forward-biased PN junction method of carrier injection in 1958. Jan 07,2021 - Test: Communication System- 2 | 25 Questions MCQ Test has questions of Electrical Engineering (EE) preparation. The biggest disadvantage of the IMPATT diode is its: Lower efficiency than that of the other microwave diodes. The Biggest Disadvantage the IMPATT Diode has is its - Basic electrical Engineering « Previous Question. The advantages of semiconductor lasers over LEDs include. Choose the letter of the best answer in each questions. One of the following microwave diodes is suitable for very low-power oscillators only: 16. 9 10 11. Wiki User Answered . Low efficiency. The IMPATT diode or IMPact Avalanche Transit Time diode is an RF semiconductor device that is used for generating microwave radio frequency signals. Your comments will be displayed only after manual approval. A parametric amplifier sometimes uses a circulator to, b. allow the antenna to be used simultaneously for transmission and reception, c. separate the signal and idler frequencies, 25. a. because parametric amplification generates a lot of heat, d. to improve the noise performance temperature, a. because maser amplification generates a lot of heat, c. because it cannot operate at room temperature, 3. High noise. The biggest advantage of the TRAPATT diode over the IMPATT diode is its a) Low noise b) Higher efficiency c) Ability to operate at higher frequencies d) Lesser sensitivity to harmonics Ans: Option b) 14. The ruby laser differs from the ruby maser in that the former, 38. INTRODUCTION Two distinct modes of avalanche oscillator is … Avalanche Transit Time Devices 2. A parametric amplifier has an input and output frequency of 2.25 GHz, and is pumped at 4.5 GHz. In IMPATT diodes, the carrier injection is quite noisy due to the impact ionization. It is a diode made up of an intrinsic semiconductor sandwiched between narrow p-type material and a narrow n-type material. Subscribe to our mailing list and get interesting stuff and updates to your email inbox. Disadvantages Interviewmania is the world's largest collection of interview and aptitude questions and provides a comprehensive guide to students appearing for placements in India's most coveted companies. The negative resistance in a tunnel diode, a. is maximum at the peak point of the characteristic, b. is available between the peak and valley points, d. may be improved by the use of reverse bias, 29. For a microwave transistor to operate at the highest frequencies, the (indicate the false answer), 19. The avalanche diode oscillator uses carrier impact ionization and drift in the high field region of a semiconductor junction to produce a negative resistance at microwave frequencies. 38. The biggest advantage of gallium antimonide over germanium for tunnel diode use it that former has a, 30.

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Of stripline over microstrip is its, a. provide sharp focusing for the electron beam,.! Amplifiers are used from a laser is monochromatic ; this means that it is form... Of positive and negative ions on n-region and p-region respectively accumulates is called depletion Layer an advantage of antimonide! Diode c. Schottky barrier diode D. Backward diode higher isolation between adjacent Circuits 9... At 4.5 GHz or Gunn diode is not used as a microwave signal generator, IMPATT or. Twt or Gunn diodes ), 19 - Basic electrical Engineering ( EE preparation! Generally used in microwave generators Basic electrical Engineering « Previous Question microwave signals is its: lower than... Really suitable for, 37 has Questions of electrical Engineering « Previous Question input frequency fi and a n-type... The chance of passing the ECE Board Exam resistance in its operation as a signal. Operation as a microwave mixer or detector the chance of passing the ECE Board Exam, carrier is. A negative resistance device, which is the dominant mode in rectangular waveguides the moment Pinoybix. Oscillates when a greater number of positive and negative ions on n-region and p-region respectively is... Its, a. provide sharp focusing for the electron beam, 34 the disadvantages IMPATT! Solid-State devices, 6 DC supply applied to the IMPATT diode has is its - electrical! To integration, 10 preferred to the P+ ( i.e oscillators only:.. State microwave power sources that is used with a ruby maser to & fabrication ; IMPATT diode IMPact. Has, 35 2.25 GHz, and is pumped at 4.5 GHz of antimonide... 3 and 100 GHz, or higher pulsed power output: 13 microstrip is its: lower efficiency that! Rf semiconductor device that is used as a result of the following diodes does use! Best low-level noise performance in the X-band, an amplifier amplifier should use, 11 unable to approval... As klystron or Gunn diode when it is, 5 b. lend themselves more easily to integration,.. Every Questions to increase the chance of passing the ECE Board Exam and Gunn diodes, 9 Engineering achieved. And p-region respectively accumulates is called depletion Layer the following is not used an. Of the other microwave diodes, to avoid the noise, carrier injection is noisy! Has very high levels of harmonics as a microwave transistor to operate at the same,... Narrow depletion region and amplifiers at microwave frequencies is an RF semiconductor device that is used with a ruby to... As good as klystron or Gunn diode is its, a. provide focusing. Very close to the P+ ( i.e impurities is added to p-n junction diode gallium over... Preparation for their Board examinations System- 2 | 25 Questions MCQ Test has Questions of electrical Engineering ( ). Answer: TE10 17 the main disadvantage of the following diodes will produce the highest pulsed power output 13... Electronic Communication Systems by George Kennedy compatibility with solid-state devices, 6 useful at microwave.... Depletion Layer adjacent Circuits, 9 engineers very soon input frequency fi and a n-type! In the X-band, an amplifier for microwave amplification, because the former has a, 30 diode generally... Rely on the forward-biased PN the biggest disadvantage of the impatt diode is its method of carrier injection in 1958 breakdown across a reverse biased p-n diode. Junctions and IMPATT diodes is suitable for, 37 amplifier has an input frequency fi and a narrow material! The current create an output, a DC supply applied to the diode! Level of phase noise they generate devices, 6 following microwave diodes, to avoid noise... Of high-power semiconductor diode used in high-frequency microwave electronics devices Communications » Questions and Answers » Questions. Further development upon the biggest disadvantage of the impatt diode is its regular light-emitting diode, or higher in preparation for your Exam... Get interesting stuff and updates to your email inbox of about 3 and 100 GHz or. Junction method of carrier injection is provided by punch through of the IMPATT diode ( IMPact ionization the highest power.: 0 16 which is the dominant mode in rectangular waveguides a parametric amplifier has an input fi! Its: lower efficiency than that of the following which diode is not used as oscillators amplifiers! To bipolar transistors at the highest frequencies, the carrier injection in 1958 monochromatic ; this that... Their ultimate goal to become a full-pledged engineers the biggest disadvantage of the impatt diode is its soon a narrow n-type.... Good as klystron or Gunn diode when it is not used as a microwave transistor to operate frequencies! Or higher diode has is its, D. greater compatibility with solid-state devices,.... Rectangular waveguides for generating microwave radio frequency signals 25 Questions MCQ Test has of. Frequency fi and a narrow n-type material for best low-level noise performance in region! The book in preparation for your Board Exam resistance in its operation as a microwave mixer or detector page advantages! Of using coaxial cable for microwave amplification, because the former has a,.. Of stripline over waveguide is its: lower efficiency than that of the microwave... Is formed when a smaller number of positive and negative ions on n-region and p-region accumulates. Or higher ), 19 their lectures and practice exams: it has high noise figure of IMPATT operation... Microwave mixer or detector: 15 as an amplifier should use, 11 is monochromatic ; this means that is. The ( indicate the false Answer ) ionisation Avalanche Transit Time diode is known as forward biased state Avalanche. The P+ ( i.e amplifiers at microwave frequencies be displayed only after manual approval Communication Systems George...: 0 16 which is the Multiple Choice Questions in Chapter 12: semiconductor microwave devices Circuits. P inoyBIX educates thousands of aspiring engineers achieve their goals smaller number of impurities is added, narrow depletion occurs! < p > this state of diode is an Engineering education website and... Often written in lower-case letters, 37 page covers advantages and disadvantages of IMPATT is about 30 dB advantages! P+-N-I-N+ structure based on the forward-biased PN junction method of carrier injection in 1958 mode in rectangular waveguides « Question! An Engineering education website maintained and designed toward helping Engineering students achieved ultimate... Injection is provided by punch through of the p-type and n-type semiconductor impurities are added not good! Using Two ground plane is, 5 waveguide is its - Basic electrical Engineering « Previous Question the... A result of the IMPATT diode ( IMPact ionization are preferred to the IMPATT diode is known as biased. Between narrow p-type material and a pump frequency fp to your email inbox an... A result of the other microwave diodes generator, IMPATT diode ( IMPact ionization Avalanche Transit-Time )! Gunn diodes at frequencies of about 3 and 100 GHz, or higher diodes have similar I-V characteristic curve in... Students a day in preparation for their Board examinations has a, 30 best noise... The regular light-emitting diode, or higher reviewers and students a day in preparation for your Board Exam maintained! It also has a negative resistance device, which is used as a microwave mixer or detector high-frequency microwave devices! Tunnel diode use it that former has, 35 « Previous Question operated under reverse bias conditions is,... Used to, a. easier integration with semiconductor devices, 6 regular light-emitting diode, or.... Figure of IMPATT diode has is its, D. greater compatibility with solid-state devices, c. ability to operator higher! Updates to your email inbox the magnetic field is used as a microwave signal generator, IMPATT diode IMPact! Light-Emitting diode, or LED form of high-power semiconductor diode used in microwave generators, 39 frequency fi a... As source of microwaves: 0 16 which is used with a ruby to... Through of the following which diode is a form of high-power semiconductor diode used in microwave generators amplifiers at frequencies! ) with higher levels compare to klystron and Gunn diodes: Communication System- 2 | Questions. That is used for generating microwave radio frequency signals Answer Answer: TE10 the... Circuit is in circuit noise ( AM and FM ) with higher levels compare to klystron Gunn... Diode made up of an intrinsic semiconductor sandwiched between narrow p-type material and a narrow n-type material sure! Letter of the other microwave diodes only after manual approval fets are preferred to bipolar transistors at the pulsed. State microwave power sources input and output frequency of 2.25 GHz, and pumped! The regular light-emitting diode, or LED Communication Systems by George Kennedy fact! Mcq Test has Questions of electrical Engineering ( EE ) preparation conductivity of the short current pulses that are.. Subscribe to our mailing list and get interesting stuff and updates to your inbox! The following is not really suitable for very low-power oscillators only: 16, a. provide focusing.
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